Quantum well intermixing in GaInNAs/GaAs structures
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چکیده
منابع مشابه
Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells QWs has been proposed in this paper. This approach utilizes contactless electroreflectance CER spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well QW into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning...
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High-efficiency optical emission past 1.3 m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap [1], wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs ...
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تاریخ انتشار 2014